Melt processing of Bi-2212 on MgO and MgO-buffered substrates
Bi-2212 thick films have been prepared by full and partial melt processing to investigate the suitability of MgO substrates in polycrystalline, single crystal and buffer layer formats. There is a marked difference in microstructural and electrical properties between thick films on polycrystalline an...
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| Veröffentlicht in: | IEEE transactions on applied superconductivity 1999-06, Vol.9 (2), p.1860-1863 |
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| container_title | IEEE transactions on applied superconductivity |
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| creator | Naylor, M.J. Grovenor, C.R.M. |
| description | Bi-2212 thick films have been prepared by full and partial melt processing to investigate the suitability of MgO substrates in polycrystalline, single crystal and buffer layer formats. There is a marked difference in microstructural and electrical properties between thick films on polycrystalline and single crystal MgO substrates. This is attributed to the degree of interaction between the liquid phase and substrate during melting. The thickness of films on single crystal MgO substrates is an important consideration in the optimization of the superconducting transport properties. |
| doi_str_mv | 10.1109/77.784820 |
| format | Article |
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There is a marked difference in microstructural and electrical properties between thick films on polycrystalline and single crystal MgO substrates. This is attributed to the degree of interaction between the liquid phase and substrate during melting. The thickness of films on single crystal MgO substrates is an important consideration in the optimization of the superconducting transport properties.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/77.784820</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Buffer layers ; Crystal microstructure ; Electronics ; Exact sciences and technology ; Melt processing ; Microelectronic fabrication (materials and surfaces technology) ; Scanning electron microscopy ; Semiconductor electronics. Microelectronics. Optoelectronics. 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There is a marked difference in microstructural and electrical properties between thick films on polycrystalline and single crystal MgO substrates. This is attributed to the degree of interaction between the liquid phase and substrate during melting. The thickness of films on single crystal MgO substrates is an important consideration in the optimization of the superconducting transport properties.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Buffer layers</subject><subject>Crystal microstructure</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Melt processing</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sputtering</subject><subject>Substrates</subject><subject>Superconducting devices</subject><subject>Superconducting films</subject><subject>Temperature</subject><subject>Thick films</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkD1PwzAQhi0EEqUwsDJlQEgMKf6M7YEBKr6kVl1gjlz7XAWlSfElA_-eVKlgZLqT7nkfnV5CLhmdMUbtndYzbaTh9IhMmFIm54qp42GniuWGc3FKzhA_KWXSSDUh90uou2yXWg-IVbPJ2pg9VjnnjGdtky03q8w1YT_zdR8jJAgZ9mvskusAz8lJdDXCxWFOycfz0_v8NV-sXt7mD4vcC6G7XAvOwStnA49CeFVY7aORBURmnIjBBxYoc6oopHI0CK3XwTpLox8SYAsxJTejd3j0qwfsym2FHuraNdD2WHIjNJdK_g9qSgWTYgBvR9CnFjFBLHep2rr0XTJa7psstS7HJgf2-iB16F0dk2t8hX8BK8QgHbCrEasA4Pd6cPwA3W54FQ</recordid><startdate>19990601</startdate><enddate>19990601</enddate><creator>Naylor, M.J.</creator><creator>Grovenor, C.R.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19990601</creationdate><title>Melt processing of Bi-2212 on MgO and MgO-buffered substrates</title><author>Naylor, M.J. ; Grovenor, C.R.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-7322ec5a9d2f33c5697cf846ef18a3fdcd1d01a56645a0d377bd9a90fc9d2e963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Buffer layers</topic><topic>Crystal microstructure</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Melt processing</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Scanning electron microscopy</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sputtering</topic><topic>Substrates</topic><topic>Superconducting devices</topic><topic>Superconducting films</topic><topic>Temperature</topic><topic>Thick films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Naylor, M.J.</creatorcontrib><creatorcontrib>Grovenor, C.R.M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Naylor, M.J.</au><au>Grovenor, C.R.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Melt processing of Bi-2212 on MgO and MgO-buffered substrates</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>1999-06-01</date><risdate>1999</risdate><volume>9</volume><issue>2</issue><spage>1860</spage><epage>1863</epage><pages>1860-1863</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>Bi-2212 thick films have been prepared by full and partial melt processing to investigate the suitability of MgO substrates in polycrystalline, single crystal and buffer layer formats. There is a marked difference in microstructural and electrical properties between thick films on polycrystalline and single crystal MgO substrates. This is attributed to the degree of interaction between the liquid phase and substrate during melting. The thickness of films on single crystal MgO substrates is an important consideration in the optimization of the superconducting transport properties.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/77.784820</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1051-8223 |
| ispartof | IEEE transactions on applied superconductivity, 1999-06, Vol.9 (2), p.1860-1863 |
| issn | 1051-8223 1558-2515 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28372454 |
| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Applied sciences Buffer layers Crystal microstructure Electronics Exact sciences and technology Melt processing Microelectronic fabrication (materials and surfaces technology) Scanning electron microscopy Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sputtering Substrates Superconducting devices Superconducting films Temperature Thick films |
| title | Melt processing of Bi-2212 on MgO and MgO-buffered substrates |
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