Melt processing of Bi-2212 on MgO and MgO-buffered substrates

Melt processing of Bi-2212 on MgO and MgO-buffered substrates

Bi-2212 thick films have been prepared by full and partial melt processing to investigate the suitability of MgO substrates in polycrystalline, single crystal and buffer layer formats. There is a marked difference in microstructural and electrical properties between thick films on polycrystalline an...

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Veröffentlicht in:IEEE transactions on applied superconductivity 1999-06, Vol.9 (2), p.1860-1863
Hauptverfasser: Naylor, M.J., Grovenor, C.R.M.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Applied sciences
Buffer layers
Crystal microstructure
Electronics
Exact sciences and technology
Melt processing
Microelectronic fabrication (materials and surfaces technology)
Scanning electron microscopy
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sputtering
Substrates
Superconducting devices
Superconducting films
Temperature
Thick films
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Beschreibung
Zusammenfassung:Bi-2212 thick films have been prepared by full and partial melt processing to investigate the suitability of MgO substrates in polycrystalline, single crystal and buffer layer formats. There is a marked difference in microstructural and electrical properties between thick films on polycrystalline and single crystal MgO substrates. This is attributed to the degree of interaction between the liquid phase and substrate during melting. The thickness of films on single crystal MgO substrates is an important consideration in the optimization of the superconducting transport properties.
ISSN:1051-8223
1558-2515
DOI:10.1109/77.784820