Rietveld analysis of ferroelectric PbZr0.525Ti0.475O3 thin films

A procedure to obtain all the components of crystal structure by simultaneous Rietveld refinement of the XRD pattern collected is described. The specimens used were PZT thin films prepared by chemical solution deposition and deposited on Si(100) and Si(100) /Pt(200) substrates. The growth condition to obtain high quality epitaxial thin PZT was carried out by spin coating at angular velocities 2500, 3000, 3500 rpm for 30 s and they were annealed at 750 C for 3 h. Single and multi layer films were made. For 21 specimens with different treatments, eight parameters were refined which included lattice parameters, background, absorption coefficient, atomic positions, two theta zero error, thermal factors, and profile peak functions. Most of the samples showed that the crystal structures were tetragonal with space group P4mm. Thermal effect and profile function refinement make were fitted better than other effects in the refinement. The plane orientations (100) and (200) were sometimes noticed as a substrate effect, but the growth of PZT thin film was confirmed. 9 refs.