Resistivity and mobility in ordered InGaP grown by MOVPE

A series of five ordered InxGa1−xP epitaxial layers with varied composition were prepared using MOVPE technique. Their electrical properties were evaluated from temperature dependent conductivity and Hall measurements using the van der Pauw method as well as from measurements of the physical and geometrical magnetoresistances in [0–11] and [011] crystallographic directions. The magnetoresistance coefficient C was defined and was used as a parameter for the assessment of the sample inhomogenity. The ratio C[0–11] and C[011] was the criterion for the sample anisotropy. We found that ordered layers exhibit the strong dependence of transport parameters on layer composition. Samples with the lattice mismatch larger than ±2 × 10−3 are inhomogeneous and layers slightly mismatched from the substrate at the growth temperature exhibit anisotropy of transport parameters. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)