Microwave switching with parallel-resonated GaAs FETS

Microwave switching with parallel-resonated GaAs FETS

The use of GaAs FETs as microwave switches is discussed, and the feasibility of such devices for applications requiring ultra low dc power consumption, low insertion loss, and bidirectionality is demonstrated. A discrete SPST switch consisting of two parallel-resonated single-gate GaAs FETs exhibite...

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Veröffentlicht in:IEEE electron device letters 1980-08, Vol.1 (8), p.156-158
Hauptverfasser: McLevige, W.V., Sokolov, V.
Format: Artikel
Sprache:eng
Schlagworte:
Frequency
Gallium arsenide
Inductors
Insertion loss
Loss measurement
Microwave devices
Microwave FETs
Resonance
Shunt (electrical)
Switches
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Zusammenfassung:The use of GaAs FETs as microwave switches is discussed, and the feasibility of such devices for applications requiring ultra low dc power consumption, low insertion loss, and bidirectionality is demonstrated. A discrete SPST switch consisting of two parallel-resonated single-gate GaAs FETs exhibited 0.5 db insertion loss with 25 db isolation at 8.5 GHz. The first monolithic SPDT switch incorporating parallel-resonated GaAs FETs is also reported.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1980.25271