Limitation of CMOS supply-voltage scaling by MOSFET threshold-voltage variation

A fundamental limit of CMOS supply-voltage (V/sub cc/) scaling has been investigated and quantified as a function of the statistical variation of MOSFET threshold-voltage (V/sub T/). Based on the data extracted from a sub 0.5 /spl mu/m logic technology, the variation of ring-oscillator propagation-d...

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Veröffentlicht in:IEEE journal of solid-state circuits 1995-08, Vol.30 (8), p.947-949
Hauptverfasser: Shih-Wei Sun, Tsui, P.G.Y.
Format: Artikel
Sprache:eng
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Zusammenfassung:A fundamental limit of CMOS supply-voltage (V/sub cc/) scaling has been investigated and quantified as a function of the statistical variation of MOSFET threshold-voltage (V/sub T/). Based on the data extracted from a sub 0.5 /spl mu/m logic technology, the variation of ring-oscillator propagation-delay (T/sub d/) significantly increases as V/sub cc/ is scaled down towards the MOSFET V/sub T/. An empirical power-law relationship was then derived to describe the scattering of circuit speed (/spl Delta/T/sub pd/) as a function of MOSFET V/sub T/ variation (/spl Delta/V/sub T/) and (V/sub cc/-V/sub T/). Agreement between the model and the experimental data was established for V/sub cc/ values from 4.0 to 0.9 V. This fundamental limit of CMOS V/sub cc/, scaling poses an additional challenge for the design and manufacturing of high-performance, low-power portable systems and battery-based equipment.< >
ISSN:0018-9200
1558-173X
DOI:10.1109/4.400439