Solution-based Fabrication of High-K Gate Dielectrics for Next-Generation Metal-Oxide Semiconductor Transistors

The semiconductor industry is currently in the process of a transition from 200 mm to 300 mm wafer size and is facing high manufacturing costs and enhanced energy consumption. It is believed the associated retooling of processing equipment capable of handling 300 mm wafers and requirements for innov...

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Veröffentlicht in:	Advanced materials (Weinheim) 2004-01, Vol.16 (2), p.118-123
Hauptverfasser:	Aoki, Y, Kunitake, T
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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