USJ formation using pulsed plasma doping

Plasma doping promises superior doping profiles and high productivity relative to traditional beamline ion implantation for future semiconductor device nodes. We present data showing ultra-shallow junction formation using VSEA's Pulsed PLAsma Doping (P 2LAD) process for several doping species (B, As, P). Due to the simple plasma-based architecture, the throughput and uptime of this process are shown to be much greater than those attainable with beamline implantation. However, several barriers to commercial adoption (e.g. process control and low levels of defect generation) must be overcome prior to proliferation of this technology. We present data demonstrating dose uniformity and repeatability, metals purity and particle performance comparable to that attainable with beamline implants. As-implanted SIMS profiles show excellent repeatability of junction depth.