Millimeter-wave GaAs FET's prepared by MBE

GaAs MESFET's suitable for operation in the millimeter-wave frequency range have been developed. These devices feature electron-beam-defined sub-half-micrometer gates with MBE grown materials. With an active-layer doping of 6 × 10 17 /cm 3 , an extrinsic transconductance of 330 mS/mm was obtain...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 1985-01, Vol.6 (1), p.1-2
Hauptverfasser:	Kim, B., Tserng, H.Q., Shih, H.D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit testing Doping Electronics Exact sciences and technology Fabrication FETs Frequency Gallium arsenide MESFETs Millimeter wave circuits Millimeter wave technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transconductance Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	GaAs MESFET's suitable for operation in the millimeter-wave frequency range have been developed. These devices feature electron-beam-defined sub-half-micrometer gates with MBE grown materials. With an active-layer doping of 6 × 10 17 /cm 3 , an extrinsic transconductance of 330 mS/mm was obtained. A 75-µm gate-width device has achieved a gain of 13, 9.5, and 6.5 dB at 35, 44, and 60 GHz, respectively.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/EDL.1985.26021