A low-inductance, low-I(c) HTS junction process

One of the challenges In fabricating digital circuitry with high temperature superconductors (HTS) is in developing a reliable junction process. The requirements of this junction process include: low-parasitic inductance, well-targeted and reproducible total inductance, uniformity in I(c) and R(n),...

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Veröffentlicht in:IEEE transactions on applied superconductivity 1997-06, Vol.7 (2), p.2940-2943
Hauptverfasser: Murduck, J M, Burch, J, Hu, R, Pettiette-Hall, C, Luine, J A, Schwarzbek, S M, Sergant, M, Chan, H
Format: Artikel
Sprache:eng
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Zusammenfassung:One of the challenges In fabricating digital circuitry with high temperature superconductors (HTS) is in developing a reliable junction process. The requirements of this junction process include: low-parasitic inductance, well-targeted and reproducible total inductance, uniformity in I(c) and R(n), and also well-targeted I(c) and I(c)R(n) product greater than 300 muV at 65 K. Junction inductance can be greatly reduced by fabrication above a groundplane. Yet the addition of a groundplane introduces fabrication issues such as film smoothness and maintenance of epitaxy through the multiple layers necessary. Step-edge junctions and SNS edge junctions with groundplanes are examined and compared through a Taguchi experimental design series. Process equipment modifications in our HTS foundry necessary to reach our fabrication goals are outlined
ISSN:1051-8223
DOI:10.1109/77.621923