A low-inductance, low-I(c) HTS junction process
One of the challenges In fabricating digital circuitry with high temperature superconductors (HTS) is in developing a reliable junction process. The requirements of this junction process include: low-parasitic inductance, well-targeted and reproducible total inductance, uniformity in I(c) and R(n),...
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Veröffentlicht in: | IEEE transactions on applied superconductivity 1997-06, Vol.7 (2), p.2940-2943 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | One of the challenges In fabricating digital circuitry with high temperature superconductors (HTS) is in developing a reliable junction process. The requirements of this junction process include: low-parasitic inductance, well-targeted and reproducible total inductance, uniformity in I(c) and R(n), and also well-targeted I(c) and I(c)R(n) product greater than 300 muV at 65 K. Junction inductance can be greatly reduced by fabrication above a groundplane. Yet the addition of a groundplane introduces fabrication issues such as film smoothness and maintenance of epitaxy through the multiple layers necessary. Step-edge junctions and SNS edge junctions with groundplanes are examined and compared through a Taguchi experimental design series. Process equipment modifications in our HTS foundry necessary to reach our fabrication goals are outlined |
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ISSN: | 1051-8223 |
DOI: | 10.1109/77.621923 |