High static performance GaInAs-GaInAsP SCH MQW 1.5 mum wavelength buried ridge stripe lasers

High static performance GaInAs-GaInAsP SCH MQW 1.5 mum wavelength buried ridge stripe lasers

The potential advantages of GaInAs/InP multiquantum well (MQW) structures over bulk material for improving the static properties of buried heterostructure (BH) lasers are demonstrated. Using a highly uniform metalorganic vapor phase epitaxy (MOVPE) growth, an optimized simple separate confinement he...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of quantum electronics 1991-06, Vol.27 (6), p.1794-1797
Hauptverfasser: Kazmierski, C, Ougazzaden, A, Blez, M, Robein, D, Landreau, J, Sermage, B, Bouley, J C, Mircea, A
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The potential advantages of GaInAs/InP multiquantum well (MQW) structures over bulk material for improving the static properties of buried heterostructure (BH) lasers are demonstrated. Using a highly uniform metalorganic vapor phase epitaxy (MOVPE) growth, an optimized simple separate confinement heterostructure (SCH) MQW layer stack, and the buried ridge stripe (BRS) structure, improved static performances over any bulk or unstrained MQW long wavelength laser were obtained. An extremely low threshold below 2 mA was obtained in short cavity lasers, the threshold current was only 10.6 mA and 110 mW continuous-wave (CW) maximum optical power was observed using 90%/10% reflectivity coatings
ISSN:0018-9197
DOI:10.1109/3.90006