Electrical characterization of the TiN/Ti/n(+)Si (and p (+)Si) interfaces by means of a circular resistor test structure

A circular geometry based test structure for contact resistance measurements is introduced, together with a compact analytical model for contact resistivity extraction. The circular resistor structure is intended to be used for VLSI contacts that tend to a rounded shape due to lithographic effects. An application to the TiN/Ti/n( )Si and TiN/Ti/p( )Si interfaces is presented. Good agreement is found with standard models for contact resistivity extraction that rely on cross Kelvin resistor test structures