Properties of MBE CdxHg1−xTe/GaAs structures modified by ion-beam milling
Modification of electrical properties of n‐ and p‐type MBE mercury–cadmium‐telluride (MCT) structures with passivation gradient band gap layers under ion milling was investigated. Main features of the CdxHg1−xTe electrical properties modification with such treatment also hold for MBE MCT structures...
Gespeichert in:
| Veröffentlicht in: | Physica status solidi. C 2004-01, Vol.1 (2), p.355-359 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 359 |
|---|---|
| container_issue | 2 |
| container_start_page | 355 |
| container_title | Physica status solidi. C |
| container_volume | 1 |
| creator | Bogoboyashchyy, V. V. Dvoretsky, S. A. Izhnin, I. I. Mikhailov, N. N. Sidorov, Yu. G. Sizov, F. F. Varavin, V. S. Yudenkov, V. A. |
| description | Modification of electrical properties of n‐ and p‐type MBE mercury–cadmium‐telluride (MCT) structures with passivation gradient band gap layers under ion milling was investigated. Main features of the CdxHg1−xTe electrical properties modification with such treatment also hold for MBE MCT structures in comparison with bulk samples. It is shown that a significant decrease of the p–n conversion rate for such structures in comparison with homogeneous bulk samples at other equal conditions is caused by the presence of the wide band gap passivation layer. The diffusion‐like character of the p–n conversion front movement is confirmed. The nature of additional “heavy” electrons in MBE structures is proposed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.200303947 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_wiley</sourceid><recordid>TN_cdi_proquest_miscellaneous_28338977</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28338977</sourcerecordid><originalsourceid>FETCH-LOGICAL-i2727-5ed22e4cfb0d2c77a0a511a5b3ec5a6fd820b082346b46f36c2a2d151c7ef21f3</originalsourceid><addsrcrecordid>eNo9kLtOwzAUQC0EEqWwMmdiS-tHbKdjiUqK2kKlBsFmOY5dGZImxIlo_4CZT-RLSFWU6d4rnXOHA8AtgiMEIR5XzqkRhpBAMgn4GRgghqCPWIDP-50El-DKufeOohCxAVis67LSdWO180rjre5nXpTt51v0-_2zT_Q4llPnuaZuVdPWHVOUmTVWZ1568Gy581MtC6-weW5322twYWTu9M3_HIKXh1kSzf3lc_wYTZe-xRxzn-oMYx0ok8IMK84llBQhSVOiFZXMZCGGKQwxCVgaMEOYwhJniCLFtcHIkCG4O_2t6vKz1a4RhXVK57nc6bJ1AoeEhBPOO3ByAr9srg-iqm0h64NAUByDiWMw0QcT680m6q_O9U-udY3e966sPwTjhFPx-hSLhMabcPW2EAn5AyVlcaQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28338977</pqid></control><display><type>article</type><title>Properties of MBE CdxHg1−xTe/GaAs structures modified by ion-beam milling</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Bogoboyashchyy, V. V. ; Dvoretsky, S. A. ; Izhnin, I. I. ; Mikhailov, N. N. ; Sidorov, Yu. G. ; Sizov, F. F. ; Varavin, V. S. ; Yudenkov, V. A.</creator><creatorcontrib>Bogoboyashchyy, V. V. ; Dvoretsky, S. A. ; Izhnin, I. I. ; Mikhailov, N. N. ; Sidorov, Yu. G. ; Sizov, F. F. ; Varavin, V. S. ; Yudenkov, V. A.</creatorcontrib><description>Modification of electrical properties of n‐ and p‐type MBE mercury–cadmium‐telluride (MCT) structures with passivation gradient band gap layers under ion milling was investigated. Main features of the CdxHg1−xTe electrical properties modification with such treatment also hold for MBE MCT structures in comparison with bulk samples. It is shown that a significant decrease of the p–n conversion rate for such structures in comparison with homogeneous bulk samples at other equal conditions is caused by the presence of the wide band gap passivation layer. The diffusion‐like character of the p–n conversion front movement is confirmed. The nature of additional “heavy” electrons in MBE structures is proposed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1610-1634</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.200303947</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>61.72.Vv ; 61.80.Jh ; 66.30.Jt ; 72.80.Ey ; 73.61.Ga</subject><ispartof>Physica status solidi. C, 2004-01, Vol.1 (2), p.355-359</ispartof><rights>Copyright © 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.200303947$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45551</link.rule.ids></links><search><creatorcontrib>Bogoboyashchyy, V. V.</creatorcontrib><creatorcontrib>Dvoretsky, S. A.</creatorcontrib><creatorcontrib>Izhnin, I. I.</creatorcontrib><creatorcontrib>Mikhailov, N. N.</creatorcontrib><creatorcontrib>Sidorov, Yu. G.</creatorcontrib><creatorcontrib>Sizov, F. F.</creatorcontrib><creatorcontrib>Varavin, V. S.</creatorcontrib><creatorcontrib>Yudenkov, V. A.</creatorcontrib><title>Properties of MBE CdxHg1−xTe/GaAs structures modified by ion-beam milling</title><title>Physica status solidi. C</title><addtitle>phys. stat. sol. (c)</addtitle><description>Modification of electrical properties of n‐ and p‐type MBE mercury–cadmium‐telluride (MCT) structures with passivation gradient band gap layers under ion milling was investigated. Main features of the CdxHg1−xTe electrical properties modification with such treatment also hold for MBE MCT structures in comparison with bulk samples. It is shown that a significant decrease of the p–n conversion rate for such structures in comparison with homogeneous bulk samples at other equal conditions is caused by the presence of the wide band gap passivation layer. The diffusion‐like character of the p–n conversion front movement is confirmed. The nature of additional “heavy” electrons in MBE structures is proposed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>61.72.Vv</subject><subject>61.80.Jh</subject><subject>66.30.Jt</subject><subject>72.80.Ey</subject><subject>73.61.Ga</subject><issn>1610-1634</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNo9kLtOwzAUQC0EEqWwMmdiS-tHbKdjiUqK2kKlBsFmOY5dGZImxIlo_4CZT-RLSFWU6d4rnXOHA8AtgiMEIR5XzqkRhpBAMgn4GRgghqCPWIDP-50El-DKufeOohCxAVis67LSdWO180rjre5nXpTt51v0-_2zT_Q4llPnuaZuVdPWHVOUmTVWZ1568Gy581MtC6-weW5322twYWTu9M3_HIKXh1kSzf3lc_wYTZe-xRxzn-oMYx0ok8IMK84llBQhSVOiFZXMZCGGKQwxCVgaMEOYwhJniCLFtcHIkCG4O_2t6vKz1a4RhXVK57nc6bJ1AoeEhBPOO3ByAr9srg-iqm0h64NAUByDiWMw0QcT680m6q_O9U-udY3e966sPwTjhFPx-hSLhMabcPW2EAn5AyVlcaQ</recordid><startdate>20040101</startdate><enddate>20040101</enddate><creator>Bogoboyashchyy, V. V.</creator><creator>Dvoretsky, S. A.</creator><creator>Izhnin, I. I.</creator><creator>Mikhailov, N. N.</creator><creator>Sidorov, Yu. G.</creator><creator>Sizov, F. F.</creator><creator>Varavin, V. S.</creator><creator>Yudenkov, V. A.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20040101</creationdate><title>Properties of MBE CdxHg1−xTe/GaAs structures modified by ion-beam milling</title><author>Bogoboyashchyy, V. V. ; Dvoretsky, S. A. ; Izhnin, I. I. ; Mikhailov, N. N. ; Sidorov, Yu. G. ; Sizov, F. F. ; Varavin, V. S. ; Yudenkov, V. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i2727-5ed22e4cfb0d2c77a0a511a5b3ec5a6fd820b082346b46f36c2a2d151c7ef21f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>61.72.Vv</topic><topic>61.80.Jh</topic><topic>66.30.Jt</topic><topic>72.80.Ey</topic><topic>73.61.Ga</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bogoboyashchyy, V. V.</creatorcontrib><creatorcontrib>Dvoretsky, S. A.</creatorcontrib><creatorcontrib>Izhnin, I. I.</creatorcontrib><creatorcontrib>Mikhailov, N. N.</creatorcontrib><creatorcontrib>Sidorov, Yu. G.</creatorcontrib><creatorcontrib>Sizov, F. F.</creatorcontrib><creatorcontrib>Varavin, V. S.</creatorcontrib><creatorcontrib>Yudenkov, V. A.</creatorcontrib><collection>Istex</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bogoboyashchyy, V. V.</au><au>Dvoretsky, S. A.</au><au>Izhnin, I. I.</au><au>Mikhailov, N. N.</au><au>Sidorov, Yu. G.</au><au>Sizov, F. F.</au><au>Varavin, V. S.</au><au>Yudenkov, V. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Properties of MBE CdxHg1−xTe/GaAs structures modified by ion-beam milling</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>phys. stat. sol. (c)</addtitle><date>2004-01-01</date><risdate>2004</risdate><volume>1</volume><issue>2</issue><spage>355</spage><epage>359</epage><pages>355-359</pages><issn>1610-1634</issn><eissn>1610-1642</eissn><abstract>Modification of electrical properties of n‐ and p‐type MBE mercury–cadmium‐telluride (MCT) structures with passivation gradient band gap layers under ion milling was investigated. Main features of the CdxHg1−xTe electrical properties modification with such treatment also hold for MBE MCT structures in comparison with bulk samples. It is shown that a significant decrease of the p–n conversion rate for such structures in comparison with homogeneous bulk samples at other equal conditions is caused by the presence of the wide band gap passivation layer. The diffusion‐like character of the p–n conversion front movement is confirmed. The nature of additional “heavy” electrons in MBE structures is proposed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.200303947</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1610-1634 |
| ispartof | Physica status solidi. C, 2004-01, Vol.1 (2), p.355-359 |
| issn | 1610-1634 1610-1642 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28338977 |
| source | Wiley Online Library Journals Frontfile Complete |
| subjects | 61.72.Vv 61.80.Jh 66.30.Jt 72.80.Ey 73.61.Ga |
| title | Properties of MBE CdxHg1−xTe/GaAs structures modified by ion-beam milling |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T23%3A44%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_wiley&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Properties%20of%20MBE%20CdxHg1%E2%88%92xTe/GaAs%20structures%20modified%20by%20ion-beam%20milling&rft.jtitle=Physica%20status%20solidi.%20C&rft.au=Bogoboyashchyy,%20V.%20V.&rft.date=2004-01-01&rft.volume=1&rft.issue=2&rft.spage=355&rft.epage=359&rft.pages=355-359&rft.issn=1610-1634&rft.eissn=1610-1642&rft_id=info:doi/10.1002/pssc.200303947&rft_dat=%3Cproquest_wiley%3E28338977%3C/proquest_wiley%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28338977&rft_id=info:pmid/&rfr_iscdi=true |