Properties of MBE CdxHg1−xTe/GaAs structures modified by ion-beam milling

Modification of electrical properties of n‐ and p‐type MBE mercury–cadmium‐telluride (MCT) structures with passivation gradient band gap layers under ion milling was investigated. Main features of the CdxHg1−xTe electrical properties modification with such treatment also hold for MBE MCT structures in comparison with bulk samples. It is shown that a significant decrease of the p–n conversion rate for such structures in comparison with homogeneous bulk samples at other equal conditions is caused by the presence of the wide band gap passivation layer. The diffusion‐like character of the p–n conversion front movement is confirmed. The nature of additional “heavy” electrons in MBE structures is proposed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)