Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si(1-x)Ge(x) epitaxial layers

The characteristics of diodes fabricated in thick Si(1-x)Ge(x) layers formed by selective epitaxial deposition have been examined by DC electrical measurements, transmission electron microscopy, and X-ray topography. Because depositing in restricted areas limits the propagation of misfit dislocation...

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Veröffentlicht in:	IEEE electron device letters 1992-04, Vol.13 (4), p.177-179
Hauptverfasser:	Kamins, T I, Nauka, K, Jacowitz, R D, Hoyt, I L, Noble, D B, Gibbons, J F
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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