Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si(1-x)Ge(x) epitaxial layers

The characteristics of diodes fabricated in thick Si(1-x)Ge(x) layers formed by selective epitaxial deposition have been examined by DC electrical measurements, transmission electron microscopy, and X-ray topography. Because depositing in restricted areas limits the propagation of misfit dislocations in thick layers, a lower misfit dislocation density is found in small-area deposited regions. Similarly, diodes fabricated in small deposited regions have more ideal forward characteristics than diodes fabricated in large regions