Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si(1-x)Ge(x) epitaxial layers

Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si(1-x)Ge(x) epitaxial layers

The characteristics of diodes fabricated in thick Si(1-x)Ge(x) layers formed by selective epitaxial deposition have been examined by DC electrical measurements, transmission electron microscopy, and X-ray topography. Because depositing in restricted areas limits the propagation of misfit dislocation...

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Veröffentlicht in:IEEE electron device letters 1992-04, Vol.13 (4), p.177-179
Hauptverfasser: Kamins, T I, Nauka, K, Jacowitz, R D, Hoyt, I L, Noble, D B, Gibbons, J F
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container_end_page 179
container_issue 4
container_start_page 177
container_title IEEE electron device letters
container_volume 13
creator Kamins, T I
Nauka, K
Jacowitz, R D
Hoyt, I L
Noble, D B
Gibbons, J F
description The characteristics of diodes fabricated in thick Si(1-x)Ge(x) layers formed by selective epitaxial deposition have been examined by DC electrical measurements, transmission electron microscopy, and X-ray topography. Because depositing in restricted areas limits the propagation of misfit dislocations in thick layers, a lower misfit dislocation density is found in small-area deposited regions. Similarly, diodes fabricated in small deposited regions have more ideal forward characteristics than diodes fabricated in large regions
doi_str_mv 10.1109/55.145012
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_28338273</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28338273</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_283382733</originalsourceid><addsrcrecordid>eNqNjc1OwzAQhH0oEuXnwBvsCbUSae3YacoZFbiXe2XsjVjqxsHroJSnJ5F4AE4zo_k0I8Sdkiul5OO6qlbKVFKVMzGXtVGFVnJzKa6YP6VUxtRmLn52AV1O5GwA23rgnHqX-zTGLsUOUyZkiA14in50jX2f4IweqIX8Qe74AIzTCH1jOIPHLjJN_Z7We1qoYli-4GJYAnaU7UDjcrBnTHwjLhobGG__9FrcP-_enl6L8firR86HE7HDEGyLsedDudV6W9Za_xv8BfUWVDE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28338273</pqid></control><display><type>article</type><title>Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si(1-x)Ge(x) epitaxial layers</title><source>IEEE Electronic Library (IEL)</source><creator>Kamins, T I ; Nauka, K ; Jacowitz, R D ; Hoyt, I L ; Noble, D B ; Gibbons, J F</creator><creatorcontrib>Kamins, T I ; Nauka, K ; Jacowitz, R D ; Hoyt, I L ; Noble, D B ; Gibbons, J F</creatorcontrib><description>The characteristics of diodes fabricated in thick Si(1-x)Ge(x) layers formed by selective epitaxial deposition have been examined by DC electrical measurements, transmission electron microscopy, and X-ray topography. Because depositing in restricted areas limits the propagation of misfit dislocations in thick layers, a lower misfit dislocation density is found in small-area deposited regions. Similarly, diodes fabricated in small deposited regions have more ideal forward characteristics than diodes fabricated in large regions</description><identifier>ISSN: 0741-3106</identifier><identifier>DOI: 10.1109/55.145012</identifier><language>eng</language><ispartof>IEEE electron device letters, 1992-04, Vol.13 (4), p.177-179</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kamins, T I</creatorcontrib><creatorcontrib>Nauka, K</creatorcontrib><creatorcontrib>Jacowitz, R D</creatorcontrib><creatorcontrib>Hoyt, I L</creatorcontrib><creatorcontrib>Noble, D B</creatorcontrib><creatorcontrib>Gibbons, J F</creatorcontrib><title>Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si(1-x)Ge(x) epitaxial layers</title><title>IEEE electron device letters</title><description>The characteristics of diodes fabricated in thick Si(1-x)Ge(x) layers formed by selective epitaxial deposition have been examined by DC electrical measurements, transmission electron microscopy, and X-ray topography. Because depositing in restricted areas limits the propagation of misfit dislocations in thick layers, a lower misfit dislocation density is found in small-area deposited regions. Similarly, diodes fabricated in small deposited regions have more ideal forward characteristics than diodes fabricated in large regions</description><issn>0741-3106</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNqNjc1OwzAQhH0oEuXnwBvsCbUSae3YacoZFbiXe2XsjVjqxsHroJSnJ5F4AE4zo_k0I8Sdkiul5OO6qlbKVFKVMzGXtVGFVnJzKa6YP6VUxtRmLn52AV1O5GwA23rgnHqX-zTGLsUOUyZkiA14in50jX2f4IweqIX8Qe74AIzTCH1jOIPHLjJN_Z7We1qoYli-4GJYAnaU7UDjcrBnTHwjLhobGG__9FrcP-_enl6L8firR86HE7HDEGyLsedDudV6W9Za_xv8BfUWVDE</recordid><startdate>19920401</startdate><enddate>19920401</enddate><creator>Kamins, T I</creator><creator>Nauka, K</creator><creator>Jacowitz, R D</creator><creator>Hoyt, I L</creator><creator>Noble, D B</creator><creator>Gibbons, J F</creator><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19920401</creationdate><title>Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si(1-x)Ge(x) epitaxial layers</title><author>Kamins, T I ; Nauka, K ; Jacowitz, R D ; Hoyt, I L ; Noble, D B ; Gibbons, J F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_283382733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kamins, T I</creatorcontrib><creatorcontrib>Nauka, K</creatorcontrib><creatorcontrib>Jacowitz, R D</creatorcontrib><creatorcontrib>Hoyt, I L</creatorcontrib><creatorcontrib>Noble, D B</creatorcontrib><creatorcontrib>Gibbons, J F</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kamins, T I</au><au>Nauka, K</au><au>Jacowitz, R D</au><au>Hoyt, I L</au><au>Noble, D B</au><au>Gibbons, J F</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si(1-x)Ge(x) epitaxial layers</atitle><jtitle>IEEE electron device letters</jtitle><date>1992-04-01</date><risdate>1992</risdate><volume>13</volume><issue>4</issue><spage>177</spage><epage>179</epage><pages>177-179</pages><issn>0741-3106</issn><abstract>The characteristics of diodes fabricated in thick Si(1-x)Ge(x) layers formed by selective epitaxial deposition have been examined by DC electrical measurements, transmission electron microscopy, and X-ray topography. Because depositing in restricted areas limits the propagation of misfit dislocations in thick layers, a lower misfit dislocation density is found in small-area deposited regions. Similarly, diodes fabricated in small deposited regions have more ideal forward characteristics than diodes fabricated in large regions</abstract><doi>10.1109/55.145012</doi></addata></record>
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title Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si(1-x)Ge(x) epitaxial layers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T08%3A09%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20and%20structural%20properties%20of%20diodes%20fabricated%20in%20thick,%20selectively%20deposited%20Si/Si(1-x)Ge(x)%20epitaxial%20layers&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Kamins,%20T%20I&rft.date=1992-04-01&rft.volume=13&rft.issue=4&rft.spage=177&rft.epage=179&rft.pages=177-179&rft.issn=0741-3106&rft_id=info:doi/10.1109/55.145012&rft_dat=%3Cproquest%3E28338273%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28338273&rft_id=info:pmid/&rfr_iscdi=true