High slew rate monolithic operational amplifier using compatible complementary P-N-P's

An internally compensated monolithic operational amplifier, fabricated using only junction-isolated bipolar processing, slews in excess of 500 V//spl mu/s, and settles to within 0.1 percent in 200 ns as a pulse inverter. Performance in the noninverting mode is only slightly degraded in comparison wi...

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Veröffentlicht in:IEEE journal of solid-state circuits 1974-12, Vol.9 (6), p.340-347
Hauptverfasser: Davis, P.C., Moyer, S.F., Saari, V.R.
Format: Artikel
Sprache:eng
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Zusammenfassung:An internally compensated monolithic operational amplifier, fabricated using only junction-isolated bipolar processing, slews in excess of 500 V//spl mu/s, and settles to within 0.1 percent in 200 ns as a pulse inverter. Performance in the noninverting mode is only slightly degraded in comparison with the inverting mode. In addition, the following performance levels have been achieved: 50-MHz unity-gain bandwidth with 96-dB open-loop gain, 30-mW quiescent power at /spl plusmn/3 V, /spl plusmn/50-mA output current capability, and output voltage to within 0.5 V of either supply. In order to achieve the above performance, the following innovations were made: 1) a process for junction-isolated compatible complementary p-n-p transistors with low collector series resistance, 2) a high-speed class-B output stage, 3) push-pull middle stages, 4) driven internal reference voltages locked to the noninverting input, and 5) very small voltage drops across large internal shaping capacitors which permit use of high-capacitance junctions.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1974.1050526