Optical properties of GaNAs and GaInAsN quantum wells
We present an overview of our optical characterization work on dilute nitride quantum well (QW) samples. A simple model for calculating interband transition energies is constructed, tested against published k.p results and used to model experimental data. Steady state photoluminescence (PL), time-re...
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| Veröffentlicht in: | Journal of physics. Condensed matter 2004-08, Vol.16 (31), p.S3387-S3412 |
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| container_end_page | S3412 |
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| container_issue | 31 |
| container_start_page | S3387 |
| container_title | Journal of physics. Condensed matter |
| container_volume | 16 |
| creator | Potter, R J Balkan, N |
| description | We present an overview of our optical characterization work on dilute nitride quantum well (QW) samples. A simple model for calculating interband transition energies is constructed, tested against published k.p results and used to model experimental data. Steady state photoluminescence (PL), time-resolved PL and photomodulated reflectance measurements are utilized to characterize GaNAs/GaAs, GaInNAs/GaAs and InGaAs/GaAs QWs. The effects of carrier localization, hot-carrier relaxation, non-radiative recombination and the reduced bandgap temperature dependence of dilute nitrides are investigated. Emission from recombining hot carriers in a GaInNAs/GaAs QW is recorded and used to estimate the LO-phonon scattering energy. The addition of small fractions of N is found to have little effect on phonon energy, which is found to be homega = 29.7 meV |
| doi_str_mv | 10.1088/0953-8984/16/31/026 |
| format | Article |
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Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Potter, R J</au><au>Balkan, N</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical properties of GaNAs and GaInAsN quantum wells</atitle><jtitle>Journal of physics. Condensed matter</jtitle><date>2004-08-11</date><risdate>2004</risdate><volume>16</volume><issue>31</issue><spage>S3387</spage><epage>S3412</epage><pages>S3387-S3412</pages><issn>0953-8984</issn><eissn>1361-648X</eissn><abstract>We present an overview of our optical characterization work on dilute nitride quantum well (QW) samples. A simple model for calculating interband transition energies is constructed, tested against published k.p results and used to model experimental data. Steady state photoluminescence (PL), time-resolved PL and photomodulated reflectance measurements are utilized to characterize GaNAs/GaAs, GaInNAs/GaAs and InGaAs/GaAs QWs. The effects of carrier localization, hot-carrier relaxation, non-radiative recombination and the reduced bandgap temperature dependence of dilute nitrides are investigated. Emission from recombining hot carriers in a GaInNAs/GaAs QW is recorded and used to estimate the LO-phonon scattering energy. The addition of small fractions of N is found to have little effect on phonon energy, which is found to be homega = 29.7 meV</abstract><pub>IOP Publishing</pub><doi>10.1088/0953-8984/16/31/026</doi></addata></record> |
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| ispartof | Journal of physics. Condensed matter, 2004-08, Vol.16 (31), p.S3387-S3412 |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Optical properties of GaNAs and GaInAsN quantum wells |
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