Optical properties of GaNAs and GaInAsN quantum wells

We present an overview of our optical characterization work on dilute nitride quantum well (QW) samples. A simple model for calculating interband transition energies is constructed, tested against published k.p results and used to model experimental data. Steady state photoluminescence (PL), time-resolved PL and photomodulated reflectance measurements are utilized to characterize GaNAs/GaAs, GaInNAs/GaAs and InGaAs/GaAs QWs. The effects of carrier localization, hot-carrier relaxation, non-radiative recombination and the reduced bandgap temperature dependence of dilute nitrides are investigated. Emission from recombining hot carriers in a GaInNAs/GaAs QW is recorded and used to estimate the LO-phonon scattering energy. The addition of small fractions of N is found to have little effect on phonon energy, which is found to be homega = 29.7 meV