High-speed photoluminescence mapping of III-V epitaxial layers for light-emitting diodes

High-speed photoluminescence mapping of III-V epitaxial layers for light-emitting diodes

Three examples are presented which demonstrate how photoluminescence wafer mapping is routinely used in the development and manufacturing of III-V optoelectronic materials and devices. Statistical data from the full-wafer PL scans of epitaxial layers is correlated with the device performance of fabr...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 1995-12, Vol.1 (4), p.987-992
1. Verfasser: Imler, W.R.
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxial layers
III-V semiconductor materials
Laser excitation
Laser modes
Light emitting diodes
Manufacturing
Optical feedback
Optical pumping
Photoluminescence
Pump lasers
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Beschreibung
Zusammenfassung:Three examples are presented which demonstrate how photoluminescence wafer mapping is routinely used in the development and manufacturing of III-V optoelectronic materials and devices. Statistical data from the full-wafer PL scans of epitaxial layers is correlated with the device performance of fabricated light-emitting diodes, and can be used to predict the brightness, uniformity and yield of these devices.
ISSN:1077-260X
1558-4542
DOI:10.1109/2944.488396