Large-signal HBT characterization and modeling at millimeter wave frequencies
A detailed large-signal analysis for the heterojunction bipolar transistor (HBT) is presented. Using a combination of computer models and corrected measurements, the bias and frequency dependence of the gain compression has been analyzed from 8 to 35 GHz for several HBTs. From 8 to 16 GHz, a commerc...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1993-06, Vol.41 (6), p.1087-1093 |
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| container_end_page | 1093 |
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| container_issue | 6 |
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| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 41 |
| creator | Teeter, D.A. East, J.R. Haddad, G.I. |
| description | A detailed large-signal analysis for the heterojunction bipolar transistor (HBT) is presented. Using a combination of computer models and corrected measurements, the bias and frequency dependence of the gain compression has been analyzed from 8 to 35 GHz for several HBTs. From 8 to 16 GHz, a commercial tuner system was used for making the measurements. However, beyond 26 GHz, an active load pull system was designed and constructed to circumvent problems created by component losses. Several comparisons between measured and modeled data are provided to illustrate the effectiveness of the characterization technique.< > |
| doi_str_mv | 10.1109/22.238532 |
| format | Article |
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Using a combination of computer models and corrected measurements, the bias and frequency dependence of the gain compression has been analyzed from 8 to 35 GHz for several HBTs. From 8 to 16 GHz, a commercial tuner system was used for making the measurements. However, beyond 26 GHz, an active load pull system was designed and constructed to circumvent problems created by component losses. Several comparisons between measured and modeled data are provided to illustrate the effectiveness of the characterization technique.< ></description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/22.238532</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Frequency dependence ; Frequency measurement ; Gain measurement ; Heterojunction bipolar transistors ; Impedance measurement ; Millimeter wave measurements ; Millimeter wave technology ; Millimeter wave transistors ; Power measurement ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Using a combination of computer models and corrected measurements, the bias and frequency dependence of the gain compression has been analyzed from 8 to 35 GHz for several HBTs. From 8 to 16 GHz, a commercial tuner system was used for making the measurements. However, beyond 26 GHz, an active load pull system was designed and constructed to circumvent problems created by component losses. Several comparisons between measured and modeled data are provided to illustrate the effectiveness of the characterization technique.< ></description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency dependence</subject><subject>Frequency measurement</subject><subject>Gain measurement</subject><subject>Heterojunction bipolar transistors</subject><subject>Impedance measurement</subject><subject>Millimeter wave measurements</subject><subject>Millimeter wave technology</subject><subject>Millimeter wave transistors</subject><subject>Power measurement</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><subject>Tuners</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNqNkT1PAzEMhiMEEqUwsDLdgJAYruT7khEqoEhFLGU-ubmkBN1HSa4g-PWkuqorTJblx69f2widEzwhBOsbSieUKcHoARoRIYpcywIfohHGROWaK3yMTmJ8TykXWI3Q8xzCyubRr1qos9ndIjNvEMD0Nvgf6H3XZtBWWdNVtvbtKoM-a3xd-8YmIvuCT5u5YD82tjXexlN05KCO9mwXx-j14X4xneXzl8en6e08N0yqPq-cYJUkgmudrHJmqCzAKczdErAxGgQItXRWa-EqXDBZCMc55hUsBS24YGN0NeiuQ5dmx75sfDS2rqG13SaWVGnCFJb_ABnjiqu_QYmFSOYTeD2AJnQxBuvKdfANhO-S4HL7gpLScnhBYi93ohAN1C5AulLcNzBVSCW321wMmLfW7qs7jV_Xooyy</recordid><startdate>19930601</startdate><enddate>19930601</enddate><creator>Teeter, D.A.</creator><creator>East, J.R.</creator><creator>Haddad, G.I.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope></search><sort><creationdate>19930601</creationdate><title>Large-signal HBT characterization and modeling at millimeter wave frequencies</title><author>Teeter, D.A. ; East, J.R. ; Haddad, G.I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-df53d61549985343c267af804fba0cc9a5a58bfe995fd073675f4404dab527453</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency dependence</topic><topic>Frequency measurement</topic><topic>Gain measurement</topic><topic>Heterojunction bipolar transistors</topic><topic>Impedance measurement</topic><topic>Millimeter wave measurements</topic><topic>Millimeter wave technology</topic><topic>Millimeter wave transistors</topic><topic>Power measurement</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><topic>Tuners</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Teeter, D.A.</creatorcontrib><creatorcontrib>East, J.R.</creatorcontrib><creatorcontrib>Haddad, G.I.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Teeter, D.A.</au><au>East, J.R.</au><au>Haddad, G.I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Large-signal HBT characterization and modeling at millimeter wave frequencies</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1993-06-01</date><risdate>1993</risdate><volume>41</volume><issue>6</issue><spage>1087</spage><epage>1093</epage><pages>1087-1093</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>A detailed large-signal analysis for the heterojunction bipolar transistor (HBT) is presented. Using a combination of computer models and corrected measurements, the bias and frequency dependence of the gain compression has been analyzed from 8 to 35 GHz for several HBTs. From 8 to 16 GHz, a commercial tuner system was used for making the measurements. However, beyond 26 GHz, an active load pull system was designed and constructed to circumvent problems created by component losses. Several comparisons between measured and modeled data are provided to illustrate the effectiveness of the characterization technique.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/22.238532</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE transactions on microwave theory and techniques, 1993-06, Vol.41 (6), p.1087-1093 |
| issn | 0018-9480 1557-9670 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28334848 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Electronics Exact sciences and technology Frequency dependence Frequency measurement Gain measurement Heterojunction bipolar transistors Impedance measurement Millimeter wave measurements Millimeter wave technology Millimeter wave transistors Power measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Tuners |
| title | Large-signal HBT characterization and modeling at millimeter wave frequencies |
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