Large-signal HBT characterization and modeling at millimeter wave frequencies

Large-signal HBT characterization and modeling at millimeter wave frequencies

A detailed large-signal analysis for the heterojunction bipolar transistor (HBT) is presented. Using a combination of computer models and corrected measurements, the bias and frequency dependence of the gain compression has been analyzed from 8 to 35 GHz for several HBTs. From 8 to 16 GHz, a commerc...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1993-06, Vol.41 (6), p.1087-1093
Hauptverfasser: Teeter, D.A., East, J.R., Haddad, G.I.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Frequency dependence
Frequency measurement
Gain measurement
Heterojunction bipolar transistors
Impedance measurement
Millimeter wave measurements
Millimeter wave technology
Millimeter wave transistors
Power measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Tuners
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Beschreibung
Zusammenfassung:A detailed large-signal analysis for the heterojunction bipolar transistor (HBT) is presented. Using a combination of computer models and corrected measurements, the bias and frequency dependence of the gain compression has been analyzed from 8 to 35 GHz for several HBTs. From 8 to 16 GHz, a commercial tuner system was used for making the measurements. However, beyond 26 GHz, an active load pull system was designed and constructed to circumvent problems created by component losses. Several comparisons between measured and modeled data are provided to illustrate the effectiveness of the characterization technique.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.238532