Longitudinal analysis of semiconductor lasers with low reflectivity facets

An analysis is made of longitudinal effects in semiconductor lasers with low facet reflectivities. For this purpose, a self-consistent model is used based on the beam propagation method, which takes into account both the lateral and longitudinal dimension. The calculations show that longitudinal eff...

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE J. Quant. Electron.; (United States) 1985-06, Vol.21 (6), p.693-699
Hauptverfasser:	Baets, R., Van de Capelle, J.-P., Lagasse, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	420300 - Engineering- Lasers- (-1989) BEAM OPTICS ELECTROMAGNETIC RADIATION Electrons ENGINEERING Exact sciences and technology Fundamental areas of phenomenology (including applications) Geometrical optics Laser beams LASER MIRRORS Laser modes LASER RADIATION Laser theory LASERS MATHEMATICAL MODELS MIRRORS Optical propagation OPTICAL PROPERTIES Optics PHYSICAL PROPERTIES Physics Power lasers RADIATIONS REFLECTIVITY SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SURFACE PROPERTIES
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