Longitudinal analysis of semiconductor lasers with low reflectivity facets

Longitudinal analysis of semiconductor lasers with low reflectivity facets

An analysis is made of longitudinal effects in semiconductor lasers with low facet reflectivities. For this purpose, a self-consistent model is used based on the beam propagation method, which takes into account both the lateral and longitudinal dimension. The calculations show that longitudinal eff...

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Veröffentlicht in:IEEE J. Quant. Electron.; (United States) 1985-06, Vol.21 (6), p.693-699
Hauptverfasser: Baets, R., Van de Capelle, J.-P., Lagasse, P.
Format: Artikel
Sprache:eng
Schlagworte:
420300 - Engineering- Lasers- (-1989)
BEAM OPTICS
ELECTROMAGNETIC RADIATION
Electrons
ENGINEERING
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Geometrical optics
Laser beams
LASER MIRRORS
Laser modes
LASER RADIATION
Laser theory
LASERS
MATHEMATICAL MODELS
MIRRORS
Optical propagation
OPTICAL PROPERTIES
Optics
PHYSICAL PROPERTIES
Physics
Power lasers
RADIATIONS
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SURFACE PROPERTIES
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Beschreibung
Zusammenfassung:An analysis is made of longitudinal effects in semiconductor lasers with low facet reflectivities. For this purpose, a self-consistent model is used based on the beam propagation method, which takes into account both the lateral and longitudinal dimension. The calculations show that longitudinal effects have a significant influence on the output fields in the laser.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1985.1072696