Ga(x)In(1-x)As(y)P(1-y)/InP terraced substrate single-mode laser

Ga(x)In(1-x)As(y)P(1-y)/InP terraced substrate single-mode laser

An index-guiding structure capable of providing well-controlled single-mode operation has been realized for Ga(x)In(1-x)AS(y)P(1-y)/InP lasers (x = 0.28, y = 0.62, andlambda = 1.3 mum) using a terraced substrate (TS) configuration prepared by single-step LPE growth. The threshold current was reduced...

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Veröffentlicht in:IEEE journal of quantum electronics 1981-06, Vol.17 (6), p.1009-1013
Hauptverfasser: Moriki, K, Kitamura, M, Iga, K, Suematsu, Y
Format: Artikel
Sprache:eng
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Zusammenfassung:An index-guiding structure capable of providing well-controlled single-mode operation has been realized for Ga(x)In(1-x)AS(y)P(1-y)/InP lasers (x = 0.28, y = 0.62, andlambda = 1.3 mum) using a terraced substrate (TS) configuration prepared by single-step LPE growth. The threshold current was reduced to as low as 44 mA and single-transverse and longitudinal mode operation was stably achieved up to 2.8 times the threshold. Continuous operation at room temperature was also demonstrated.
ISSN:0018-9197