GaAs single-barrier varactors for millimeter-wave triplers: guidelines for enhanced performance

Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barriers. By placing a thin AlAs layer in the center of an Al/sub 0.4/Ga/sub 0.6/As barrier, and using In/sub 0.2/Ga/sub 0.8/As spacers, one can increase the effective barrier height, thereby achieving SB...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 1994-12, Vol.42 (12), p.2512-2516
Hauptverfasser:	Krishnamurthi, K., Nilsen, S.M., Harrison, R.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Circuits Current measurement Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Gallium arsenide Guidelines HBV Leakage current Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwave technology Photonic band gap QBV SBV Semiconductor materials Space technology Varactors
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Beschreibung
Zusammenfassung:	Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barriers. By placing a thin AlAs layer in the center of an Al/sub 0.4/Ga/sub 0.6/As barrier, and using In/sub 0.2/Ga/sub 0.8/As spacers, one can increase the effective barrier height, thereby achieving SBVs with both high Q and good capacitance-modulation characteristics. Simulation of a 192-GHz tripler using these varactors shows purely reactive multiplication, without the output-power saturation both predicted and observed in triplers using leaky-barrier SBVs.< >
ISSN:	0018-9480 1557-9670 1557-9670
DOI:	10.1109/22.339790