High-efficiency GaInP-AlGaInP ridge waveguide single-mode lasers operating at 650 nm

The authors report a very high quantum efficiency of 91% for antireflection/high-reflection-coated GaInP-AlGaInP ridge waveguide laser diodes operating at 650 nm range. The laser structure was grown by solid-source molecular beam epitaxy. The laser diodes performed stable single-mode operation up to...

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Veröffentlicht in:	IEEE photonics technology letters 1998-11, Vol.10 (11), p.1533-1535
Hauptverfasser:	Kongas, J., Savolainen, P., Toivonen, M., Orsila, S., Corvini, P., Jansen, M., Nabiev, R.F., Pessa, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Coatings Current measurement Diode lasers Etching Molecular beam epitaxial growth Optical materials Optical waveguides Semiconductor lasers Threshold current Waveguide lasers
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