High-efficiency GaInP-AlGaInP ridge waveguide single-mode lasers operating at 650 nm

High-efficiency GaInP-AlGaInP ridge waveguide single-mode lasers operating at 650 nm

The authors report a very high quantum efficiency of 91% for antireflection/high-reflection-coated GaInP-AlGaInP ridge waveguide laser diodes operating at 650 nm range. The laser structure was grown by solid-source molecular beam epitaxy. The laser diodes performed stable single-mode operation up to...

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Veröffentlicht in:IEEE photonics technology letters 1998-11, Vol.10 (11), p.1533-1535
Hauptverfasser: Kongas, J., Savolainen, P., Toivonen, M., Orsila, S., Corvini, P., Jansen, M., Nabiev, R.F., Pessa, M.
Format: Artikel
Sprache:eng
Schlagworte:
Coatings
Current measurement
Diode lasers
Etching
Molecular beam epitaxial growth
Optical materials
Optical waveguides
Semiconductor lasers
Threshold current
Waveguide lasers
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Zusammenfassung:The authors report a very high quantum efficiency of 91% for antireflection/high-reflection-coated GaInP-AlGaInP ridge waveguide laser diodes operating at 650 nm range. The laser structure was grown by solid-source molecular beam epitaxy. The laser diodes performed stable single-mode operation up to 60 mW. Threshold current as low as 50 mA was measured for 5.5×600 μm 2 laser diodes. To the authors' best knowledge, this is among the best ever reported efficiency for visible lasers.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.726740