High-gain quantum-dot semiconductor optical amplifier for 1300 nm

Using an AlGaAs-GaAs waveguide structure with a six-stack InAs-InGaAs "dots-in-a-well" (DWELL) gain region having an aggregate dot density of approximately 8/spl times/10/sup 11/ cm/sup -2/, an optical gain of 18 dB at 1300 nm has been obtained in a 2.4-mm-long amplifier at 100-mA pump cur...

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Veröffentlicht in:	IEEE journal of quantum electronics 2003-11, Vol.39 (11), p.1409-1414
Hauptverfasser:	Bakonyi, Z., Hui Su, Onishchukov, G., Lester, L.F., Gray, A.L., Newell, T.C., Tunnermann, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aggregates Amplification Amplifiers Density Dynamic tests Gain Noise levels Optical amplifiers Optical pumping Optical saturation Optical waveguides Pumps Quantum dots Qunatum dots Semiconductor optical amplifiers Semiconductor waveguides Stimulated emission
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Beschreibung
Zusammenfassung:	Using an AlGaAs-GaAs waveguide structure with a six-stack InAs-InGaAs "dots-in-a-well" (DWELL) gain region having an aggregate dot density of approximately 8/spl times/10/sup 11/ cm/sup -2/, an optical gain of 18 dB at 1300 nm has been obtained in a 2.4-mm-long amplifier at 100-mA pump current. The optical bandwidth is 50 nm, and the output saturation power is 9 dBm. The dependence of the amplifier parameters on the pump current and the gain recovery dynamics has also been studied.
ISSN:	0018-9197 1558-1713
DOI:	10.1109/JQE.2003.818306