High-speed GaAs/AlGaAs multiple-quantum-well lasers: design and characterization

Summary form only given. The authors have developed GaAs/AlGaAs multiple-quantum-well (MQW) lasers with direct modulation bandwidths of 16 GHz. The devices utilize a compact vertical layer structure which also makes them particularly suitable for integration. The theoretical calculations leading to...

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Veröffentlicht in:	IEEE transactions on electron devices 1992-11, Vol.39 (11), p.2660-2661
Hauptverfasser:	Esquivias, I., Weisser, S., Ralston, J.D., Gallagher, D.F.G., Larkins, E.C., Tasker, P.J., Rosenzweig, J., Fleissner, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandwidth Design optimization Gallium arsenide Laser theory Optical design Optical pulses Pulse modulation Quantum well devices Resonance Resonant frequency
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