High-speed GaAs/AlGaAs multiple-quantum-well lasers: design and characterization

Summary form only given. The authors have developed GaAs/AlGaAs multiple-quantum-well (MQW) lasers with direct modulation bandwidths of 16 GHz. The devices utilize a compact vertical layer structure which also makes them particularly suitable for integration. The theoretical calculations leading to...

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Veröffentlicht in:	IEEE transactions on electron devices 1992-11, Vol.39 (11), p.2660-2661
Hauptverfasser:	Esquivias, I., Weisser, S., Ralston, J.D., Gallagher, D.F.G., Larkins, E.C., Tasker, P.J., Rosenzweig, J., Fleissner, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandwidth Design optimization Gallium arsenide Laser theory Optical design Optical pulses Pulse modulation Quantum well devices Resonance Resonant frequency
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Zusammenfassung:	Summary form only given. The authors have developed GaAs/AlGaAs multiple-quantum-well (MQW) lasers with direct modulation bandwidths of 16 GHz. The devices utilize a compact vertical layer structure which also makes them particularly suitable for integration. The theoretical calculations leading to this optimized design as well as the DC and high-frequency characteristics of the lasers are discussed. A 3-dB electrical modulation bandwidth of 16 GHz was achieved at 90-mA pulsed bias in a 4- mu m200- mu m device. The slope of the plot of the resonance frequency versus the square root of the optical power yielded values of dg/dn ranging between 410/sup -16/ and 7*10/sup -16/ cm/sup 2/ for short-cavity-length and narrow-mesa-width lasers.< >
ISSN:	0018-9383 1557-9646
DOI:	10.1109/16.163524