High-field electron velocity in silicon surface-accumulation layers
Temperature dependence of saturation velocity in bulk silicon and in surface-accumulation layers was studied between room temperature and 600 K. The saturation electron velocity in bulk silicon was found to have a steeper temperature dependence than previously reported. The saturation velocity in su...
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| Veröffentlicht in: | IEEE electron device letters 1999-09, Vol.20 (9), p.490-492 |
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| container_end_page | 492 |
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| container_issue | 9 |
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| container_title | IEEE electron device letters |
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| creator | Arnold, E. Letavic, T. Herko, S. |
| description | Temperature dependence of saturation velocity in bulk silicon and in surface-accumulation layers was studied between room temperature and 600 K. The saturation electron velocity in bulk silicon was found to have a steeper temperature dependence than previously reported. The saturation velocity in surface-accumulation layers was found to be equal to the electron velocity in the bulk, and independent of the perpendicular electric field. |
| doi_str_mv | 10.1109/55.784462 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28320723</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>784462</ieee_id><sourcerecordid>28320723</sourcerecordid><originalsourceid>FETCH-LOGICAL-c376t-d4e5c9c8d03f636eabfbdc2ce1ece88823b907bf8138ef5897f5e1c614d9c7933</originalsourceid><addsrcrecordid>eNp90L1PwzAQBXALgUQpDKxMmRAMLnb8mRFVQJEqscAcOZczGLlNsROk_vekCmJkOundT294hFxytuCcVXdKLYyVUpdHZMaVspQpLY7JjBnJqeBMn5KznD8Z41IaOSPLVXj_oD5gbAuMCH3qtsU3xg5Cvy_CtsghBhizPCTvAKkDGDZDdH0Yw-j2mPI5OfEuZrz4vXPy9vjwulzR9cvT8_J-TUEY3dNWooIKbMuE10Kja3zTQgnIEdBaW4qmYqbxlguLXtnKeIUcNJdtBaYSYk6up95d6r4GzH29CRkwRrfFbsh1aUXJTHmAN_9Crg0vleGajfR2opC6nBP6epfCxqV9zVl9WLRWqp4WHe3VZAMi_rnf5w9sX3EW</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671257160</pqid></control><display><type>article</type><title>High-field electron velocity in silicon surface-accumulation layers</title><source>IEEE Electronic Library (IEL)</source><creator>Arnold, E. ; Letavic, T. ; Herko, S.</creator><creatorcontrib>Arnold, E. ; Letavic, T. ; Herko, S.</creatorcontrib><description>Temperature dependence of saturation velocity in bulk silicon and in surface-accumulation layers was studied between room temperature and 600 K. The saturation electron velocity in bulk silicon was found to have a steeper temperature dependence than previously reported. The saturation velocity in surface-accumulation layers was found to be equal to the electron velocity in the bulk, and independent of the perpendicular electric field.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.784462</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Devices ; Doping profiles ; Electric fields ; Electron mobility ; Measurement techniques ; MOS devices ; Ohmic contacts ; Resistors ; Saturation ; Silicon ; Temperature dependence ; Voltage ; Wafer bonding</subject><ispartof>IEEE electron device letters, 1999-09, Vol.20 (9), p.490-492</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c376t-d4e5c9c8d03f636eabfbdc2ce1ece88823b907bf8138ef5897f5e1c614d9c7933</citedby><cites>FETCH-LOGICAL-c376t-d4e5c9c8d03f636eabfbdc2ce1ece88823b907bf8138ef5897f5e1c614d9c7933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/784462$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/784462$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Arnold, E.</creatorcontrib><creatorcontrib>Letavic, T.</creatorcontrib><creatorcontrib>Herko, S.</creatorcontrib><title>High-field electron velocity in silicon surface-accumulation layers</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Temperature dependence of saturation velocity in bulk silicon and in surface-accumulation layers was studied between room temperature and 600 K. The saturation electron velocity in bulk silicon was found to have a steeper temperature dependence than previously reported. The saturation velocity in surface-accumulation layers was found to be equal to the electron velocity in the bulk, and independent of the perpendicular electric field.</description><subject>Devices</subject><subject>Doping profiles</subject><subject>Electric fields</subject><subject>Electron mobility</subject><subject>Measurement techniques</subject><subject>MOS devices</subject><subject>Ohmic contacts</subject><subject>Resistors</subject><subject>Saturation</subject><subject>Silicon</subject><subject>Temperature dependence</subject><subject>Voltage</subject><subject>Wafer bonding</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90L1PwzAQBXALgUQpDKxMmRAMLnb8mRFVQJEqscAcOZczGLlNsROk_vekCmJkOundT294hFxytuCcVXdKLYyVUpdHZMaVspQpLY7JjBnJqeBMn5KznD8Z41IaOSPLVXj_oD5gbAuMCH3qtsU3xg5Cvy_CtsghBhizPCTvAKkDGDZDdH0Yw-j2mPI5OfEuZrz4vXPy9vjwulzR9cvT8_J-TUEY3dNWooIKbMuE10Kja3zTQgnIEdBaW4qmYqbxlguLXtnKeIUcNJdtBaYSYk6up95d6r4GzH29CRkwRrfFbsh1aUXJTHmAN_9Crg0vleGajfR2opC6nBP6epfCxqV9zVl9WLRWqp4WHe3VZAMi_rnf5w9sX3EW</recordid><startdate>19990901</startdate><enddate>19990901</enddate><creator>Arnold, E.</creator><creator>Letavic, T.</creator><creator>Herko, S.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>19990901</creationdate><title>High-field electron velocity in silicon surface-accumulation layers</title><author>Arnold, E. ; Letavic, T. ; Herko, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c376t-d4e5c9c8d03f636eabfbdc2ce1ece88823b907bf8138ef5897f5e1c614d9c7933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Devices</topic><topic>Doping profiles</topic><topic>Electric fields</topic><topic>Electron mobility</topic><topic>Measurement techniques</topic><topic>MOS devices</topic><topic>Ohmic contacts</topic><topic>Resistors</topic><topic>Saturation</topic><topic>Silicon</topic><topic>Temperature dependence</topic><topic>Voltage</topic><topic>Wafer bonding</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Arnold, E.</creatorcontrib><creatorcontrib>Letavic, T.</creatorcontrib><creatorcontrib>Herko, S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Arnold, E.</au><au>Letavic, T.</au><au>Herko, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-field electron velocity in silicon surface-accumulation layers</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1999-09-01</date><risdate>1999</risdate><volume>20</volume><issue>9</issue><spage>490</spage><epage>492</epage><pages>490-492</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Temperature dependence of saturation velocity in bulk silicon and in surface-accumulation layers was studied between room temperature and 600 K. The saturation electron velocity in bulk silicon was found to have a steeper temperature dependence than previously reported. The saturation velocity in surface-accumulation layers was found to be equal to the electron velocity in the bulk, and independent of the perpendicular electric field.</abstract><pub>IEEE</pub><doi>10.1109/55.784462</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1999-09, Vol.20 (9), p.490-492 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28320723 |
| source | IEEE Electronic Library (IEL) |
| subjects | Devices Doping profiles Electric fields Electron mobility Measurement techniques MOS devices Ohmic contacts Resistors Saturation Silicon Temperature dependence Voltage Wafer bonding |
| title | High-field electron velocity in silicon surface-accumulation layers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-16T04%3A21%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-field%20electron%20velocity%20in%20silicon%20surface-accumulation%20layers&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Arnold,%20E.&rft.date=1999-09-01&rft.volume=20&rft.issue=9&rft.spage=490&rft.epage=492&rft.pages=490-492&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/55.784462&rft_dat=%3Cproquest_RIE%3E28320723%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1671257160&rft_id=info:pmid/&rft_ieee_id=784462&rfr_iscdi=true |