High-field electron velocity in silicon surface-accumulation layers

High-field electron velocity in silicon surface-accumulation layers

Temperature dependence of saturation velocity in bulk silicon and in surface-accumulation layers was studied between room temperature and 600 K. The saturation electron velocity in bulk silicon was found to have a steeper temperature dependence than previously reported. The saturation velocity in su...

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Veröffentlicht in:IEEE electron device letters 1999-09, Vol.20 (9), p.490-492
Hauptverfasser: Arnold, E., Letavic, T., Herko, S.
Format: Artikel
Sprache:eng
Schlagworte:
Devices
Doping profiles
Electric fields
Electron mobility
Measurement techniques
MOS devices
Ohmic contacts
Resistors
Saturation
Silicon
Temperature dependence
Voltage
Wafer bonding
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Beschreibung
Zusammenfassung:Temperature dependence of saturation velocity in bulk silicon and in surface-accumulation layers was studied between room temperature and 600 K. The saturation electron velocity in bulk silicon was found to have a steeper temperature dependence than previously reported. The saturation velocity in surface-accumulation layers was found to be equal to the electron velocity in the bulk, and independent of the perpendicular electric field.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.784462