Electrical and reliability characteristics of an ultrathin TaO(x)N/y/ gate dielectric prepared by ND(3) annealing of Ta(2)O(5)
This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO(x)N/y/) via the ND(3) annealing of Ta(2)O(5), for use in gate dielectric applications. Compared with tantalum oxide (Ta(2)O(5)), a significant improvement in the dielectric constant was obtained by th...
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Veröffentlicht in: | IEEE electron device letters 2000-12, Vol.21 (12), p.563-565 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO(x)N/y/) via the ND(3) annealing of Ta(2)O(5), for use in gate dielectric applications. Compared with tantalum oxide (Ta(2)O(5)), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We were able to confirm nitrogen incorporation in the tantalum oxynitride (TaO(x)N/y/) by Auger electron spectroscopy. Compared with NH(3) nitridation, tantalum oxynitride prepared by nitridation in ND(3) shows less charge trapping and larger charge-to-breakdown characteristics. |
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ISSN: | 0741-3106 |
DOI: | 10.1109/55.887466 |