Electrical and reliability characteristics of an ultrathin TaO(x)N/y/ gate dielectric prepared by ND(3) annealing of Ta(2)O(5)

This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO(x)N/y/) via the ND(3) annealing of Ta(2)O(5), for use in gate dielectric applications. Compared with tantalum oxide (Ta(2)O(5)), a significant improvement in the dielectric constant was obtained by th...

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Veröffentlicht in:IEEE electron device letters 2000-12, Vol.21 (12), p.563-565
Hauptverfasser: Jung, Hyungsuk, Im, Kiju, Yang, Dooyoung, Hwang, Hyunsang
Format: Artikel
Sprache:eng
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Zusammenfassung:This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO(x)N/y/) via the ND(3) annealing of Ta(2)O(5), for use in gate dielectric applications. Compared with tantalum oxide (Ta(2)O(5)), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We were able to confirm nitrogen incorporation in the tantalum oxynitride (TaO(x)N/y/) by Auger electron spectroscopy. Compared with NH(3) nitridation, tantalum oxynitride prepared by nitridation in ND(3) shows less charge trapping and larger charge-to-breakdown characteristics.
ISSN:0741-3106
DOI:10.1109/55.887466