Raman spectroscopy of Ge/Pd/GaAs contacts

The target of the experiments was to study the processes, which occur at annealing of the Ge/Pd/GaAs contact structure, using RTA method, at temperature of 350 °C. Raman spectroscopy and RBS analysis were used for the study. The obtained results provide a survey of chemical reactions in the solid phase, which occur both during the annealing process of the Ge/Pd/GaAs contact structure and during the metallization deposition. After thermal annealing, the metallization contains the PdGe phase and a thin germanium layer remains at the surface. The structure annealing is directed by a process, which is described in the literature as “solid phase regrowth”.