High-reliability interconnections for ULSI using Al-Si-Pd-Nd/Mo layered films

An Al-Si-Pd-Nb alloy and a bilayered interconnection using this alloy with molybdenum have been investigated for ULSI interconnections. The electromigration lifetime of Al-Si-0.3 wt.% Pd-0.4 wt.% Nb was 5 times better as compared to Al-Si-0.5 wt.% Cu. In addition, layering this alloy with low-resist...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 1992-06, Vol.39 (6), p.1322-1326
Hauptverfasser:	Onuki, J., Koubuchi, Y., Suwa, M., Koizumi, M., Gardner, D.S., Suzuki, H., Minowa, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum alloys Copper alloys Corrosion Electromigration Grain boundaries Laboratories Niobium alloys Semiconductor thin films Sputtering Ultra large scale integration
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!