High-reliability interconnections for ULSI using Al-Si-Pd-Nd/Mo layered films

An Al-Si-Pd-Nb alloy and a bilayered interconnection using this alloy with molybdenum have been investigated for ULSI interconnections. The electromigration lifetime of Al-Si-0.3 wt.% Pd-0.4 wt.% Nb was 5 times better as compared to Al-Si-0.5 wt.% Cu. In addition, layering this alloy with low-resistivity molybdenum improved the electromigration resistance considerably as compared to Al-Si-Cu layered with a high-resistivity metal, i.e., TiW. PdO was thought to be formed on the Al-Si-0.3 wt.% Pd-0.4 wt.% Nb alloy's surface. The corrosion resistance of this alloy is much better than that of Al-Si-Cu because of this PdO. The ease in patterning the alloy at submicrometer linewidths (to 0.5 mu m) is quite satisfactory. The Al-Si-Pd-Nb/Mo layered system is therefore thought to be promising for future interconnection applications requiring durability against high current densities.< >