Internal Stress in Polycrystalline Si Film Recrystallized by Excimer Laser Annealing

Internal stresses in polycrystalline-Si (poly-Si) films fabricated by excimer laser annealing on the SiO2/glass, SiO2/SiN/glass and quartz substrates are examined by the Raman transverse optical phonon peak shift. The full-width at half maximum of the peak and the grain morphology are also measured. The relaxation of the internal stress due to the formation of a secondary crystal grain in the poly-Si film on the SiO2/glass substrate is also discussed. 15 refs.