High channel density dual operation mode MOS-controlled thyristor with superior current saturation capability

High channel density dual operation mode MOS-controlled thyristor with superior current saturation capability

A 1200-V dual operation mode MCT with low on state voltage drop, high turn-off current and superior current saturation capability has been developed. The dual operation mode MCT overcomes the tradeoff between the on-state voltage drop and the current saturation capability of the conventional IGBT op...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2000-09, Vol.21 (9), p.463-465
Hauptverfasser: Budong You, Temple, V.A.K., Huang, A.Q., Holroyd, F.
Format: Artikel
Sprache:eng
Schlagworte:
Channels
Density
Devices
Electric potential
Insulated gate bipolar transistors
Low voltage
MOSFET circuits
Protection
Saturation
Silicon compounds
Switches
Switching circuits
Testing
Thyristors
Voltage drop
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A 1200-V dual operation mode MCT with low on state voltage drop, high turn-off current and superior current saturation capability has been developed. The dual operation mode MCT overcomes the tradeoff between the on-state voltage drop and the current saturation capability of the conventional IGBT operation by working in a thyristor mode in the on state and in an IGBT mode during the switching transient. This letter reports the device development and demonstrates how the dual operation mode MCT can be beneficial in switching circuit applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.863113