A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
In this paper, the design and realization of an integrated high frequency AGC amplifier in BiCMOS technology are discussed. The amplifier has 36 dB voltage gain, 4 GHz bandwidth, dynamic range exceeding 50 dB, low spectral distortion and low power consumption. The amplifier is suitable for applicati...
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1994-04, Vol.42 (4), p.546-552 |
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creator | de Vreede, L.C.N. Dambrine, A.C. Tauritz, J.L. Baets, R.G.F. |
description | In this paper, the design and realization of an integrated high frequency AGC amplifier in BiCMOS technology are discussed. The amplifier has 36 dB voltage gain, 4 GHz bandwidth, dynamic range exceeding 50 dB, low spectral distortion and low power consumption. The amplifier is suitable for application in wide-band optical telecommunication systems.< > |
doi_str_mv | 10.1109/22.285058 |
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The amplifier has 36 dB voltage gain, 4 GHz bandwidth, dynamic range exceeding 50 dB, low spectral distortion and low power consumption. 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The amplifier has 36 dB voltage gain, 4 GHz bandwidth, dynamic range exceeding 50 dB, low spectral distortion and low power consumption. The amplifier is suitable for application in wide-band optical telecommunication systems.< ></description><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>BiCMOS integrated circuits</subject><subject>Broadband amplifiers</subject><subject>Circuit properties</subject><subject>Dynamic range</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Gain</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Optical amplifiers</subject><subject>Optical distortion</subject><subject>Silicon</subject><subject>Voltage</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAQhi0EEqUwsDJ5QEgMKedvZ6NU0CJVYoE5cpxza5QmJS6q4NeTqlVXptPd-9wzvIRcMxgxBvkD5yNuFSh7QgZMKZPl2sApGQAwm-XSwjm5SOmzX6UCOyCPY7qMiyVduNjQFOvo24aOpxPqVus6hogd3cbNkjoqaPVES9dU21j1hzZQSaez30tyFlyd8Oowh-Tj5fl9Msvmb9PXyXieeWH4JuNBawCHqIOwpVPcKFtWOXCOhoXKYfAyBy8qgyVURimbg0TkOTghylKJIbnbe9dd-_WNaVOsYvJY167B9jsV3ArQfQP_g1oKMGJnvN-DvmtT6jAU6y6uXPdTMCh2ZRacF_sye_b2IHXJuzp0rvExHR8kkxq06bGbPRYR8ZgeHH94QHg9</recordid><startdate>19940401</startdate><enddate>19940401</enddate><creator>de Vreede, L.C.N.</creator><creator>Dambrine, A.C.</creator><creator>Tauritz, J.L.</creator><creator>Baets, R.G.F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19940401</creationdate><title>A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz</title><author>de Vreede, L.C.N. ; Dambrine, A.C. ; Tauritz, J.L. ; Baets, R.G.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c372t-2f6600aee6f38ba52758bd9022e71fdaefc490c3d7eb0d7558904ee290a33bb53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>BiCMOS integrated circuits</topic><topic>Broadband amplifiers</topic><topic>Circuit properties</topic><topic>Dynamic range</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>Gain</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Optical amplifiers</topic><topic>Optical distortion</topic><topic>Silicon</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>de Vreede, L.C.N.</creatorcontrib><creatorcontrib>Dambrine, A.C.</creatorcontrib><creatorcontrib>Tauritz, J.L.</creatorcontrib><creatorcontrib>Baets, R.G.F.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>de Vreede, L.C.N.</au><au>Dambrine, A.C.</au><au>Tauritz, J.L.</au><au>Baets, R.G.F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1994-04-01</date><risdate>1994</risdate><volume>42</volume><issue>4</issue><spage>546</spage><epage>552</epage><pages>546-552</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>In this paper, the design and realization of an integrated high frequency AGC amplifier in BiCMOS technology are discussed. The amplifier has 36 dB voltage gain, 4 GHz bandwidth, dynamic range exceeding 50 dB, low spectral distortion and low power consumption. The amplifier is suitable for application in wide-band optical telecommunication systems.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/22.285058</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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ispartof | IEEE transactions on microwave theory and techniques, 1994-04, Vol.42 (4), p.546-552 |
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subjects | Applied sciences Bandwidth BiCMOS integrated circuits Broadband amplifiers Circuit properties Dynamic range Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Frequency Gain Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Optical amplifiers Optical distortion Silicon Voltage |
title | A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz |
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