A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz

A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz

In this paper, the design and realization of an integrated high frequency AGC amplifier in BiCMOS technology are discussed. The amplifier has 36 dB voltage gain, 4 GHz bandwidth, dynamic range exceeding 50 dB, low spectral distortion and low power consumption. The amplifier is suitable for applicati...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1994-04, Vol.42 (4), p.546-552
Hauptverfasser: de Vreede, L.C.N., Dambrine, A.C., Tauritz, J.L., Baets, R.G.F.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Bandwidth
BiCMOS integrated circuits
Broadband amplifiers
Circuit properties
Dynamic range
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Frequency
Gain
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Optical amplifiers
Optical distortion
Silicon
Voltage
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Zusammenfassung:In this paper, the design and realization of an integrated high frequency AGC amplifier in BiCMOS technology are discussed. The amplifier has 36 dB voltage gain, 4 GHz bandwidth, dynamic range exceeding 50 dB, low spectral distortion and low power consumption. The amplifier is suitable for application in wide-band optical telecommunication systems.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.285058