Electron saturation velocity variation in InGaAs and GaAs channelMODFETs for gate length to 550 A

MODFETs with InGaAs and GaAs channels have been fabricated with gate lengths between 2 mum and 550 A and have been DC characterized at room temperature. An effective electron saturation velocity was calculated for each device from the peak transconductance. The GaAs channel devices show a peak in th...

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Veröffentlicht in:	IEEE electron device letters 1988-03, Vol.9 (3), p.148-150
Hauptverfasser:	de la Houssaye, P R, Allee, D R, Pao, Y, Schlom, D G, Harris, J S, Pease, R F W
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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