Operando electron microscopy investigation of polar domain dynamics in twisted van der Waals homobilayers
Conventional antiferroelectric materials with atomic-scale anti-aligned dipoles undergo a transition to a ferroelectric (FE) phase under strong electric fields. The moiré superlattice formed in the twisted stacks of van der Waals crystals exhibits polar domains alternating in moiré length with anti-...
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Veröffentlicht in: | Nature materials 2023-08, Vol.22 (8), p.992-998 |
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Sprache: | eng |
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Zusammenfassung: | Conventional antiferroelectric materials with atomic-scale anti-aligned dipoles undergo a transition to a ferroelectric (FE) phase under strong electric fields. The moiré superlattice formed in the twisted stacks of van der Waals crystals exhibits polar domains alternating in moiré length with anti-aligned dipoles. In this moiré domain antiferroelectic (MDAF) arrangement, the distribution of electric dipoles is distinguished from that of two-dimensional FEs, suggesting dissimilar domain dynamics. Here we performed an operando transmission electron microscopy investigation on twisted bilayer WSe
2
to observe the polar domain dynamics in real time. We find that the topological protection, provided by the domain wall network, prevents the MDAF-to-FE transition. As one decreases the twist angle, however, this transition occurs as the domain wall network disappears. Exploiting stroboscopic operando transmission electron microscopy on the FE phase, we measure a maximum domain wall velocity of 300 μm s
–1
. Domain wall pinnings by various disorders limit the domain wall velocity and cause Barkhausen noises in the polarization hysteresis loop. Atomic-scale analysis of the pinning disorders provides structural insight on how to improve the switching speed of van der Waals FEs.
Polar domains have been observed in twist-stacked van der Waals layers, but their dynamics are unexplored. Here, using operando electron microscopy, it is found that polar domains in an antiferroelectric arrangement cannot transition to a ferroelectric state due to topological protection of the domain wall network. |
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ISSN: | 1476-1122 1476-4660 |
DOI: | 10.1038/s41563-023-01595-0 |