Non-equilibrium procesess in CdTe material

Studies of the lifetime of non-equilibrium charge carriers and their recombination mechanisms are particularly important to the design of photovoltaic devices. In this present work, photoconductivity properties of CdTe crystals are investigated in a wide temperature range ( T=400–10 K) by the photo-...

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Veröffentlicht in:Thin solid films 2004-03, Vol.451 (Complete), p.184-188
Hauptverfasser: Virt, I.S., Bester, M., Kuzma, M., Popovych, V.D.
Format: Artikel
Sprache:eng
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Zusammenfassung:Studies of the lifetime of non-equilibrium charge carriers and their recombination mechanisms are particularly important to the design of photovoltaic devices. In this present work, photoconductivity properties of CdTe crystals are investigated in a wide temperature range ( T=400–10 K) by the photo-induced current transient spectroscopy (PICTS) method. The bulk Bridgman CdTe samples was studied in the pulsed activation domain. Following these measurements, the value of deep ( E A=200 meV) recombination level and shallow trap levels ( E B=1 meV) were determined. Level E A result from structural defects of the Cd sublattice. In the low temperature region ( T
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2003.10.112