Non-equilibrium procesess in CdTe material
Studies of the lifetime of non-equilibrium charge carriers and their recombination mechanisms are particularly important to the design of photovoltaic devices. In this present work, photoconductivity properties of CdTe crystals are investigated in a wide temperature range ( T=400–10 K) by the photo-...
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Veröffentlicht in: | Thin solid films 2004-03, Vol.451 (Complete), p.184-188 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
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Zusammenfassung: | Studies of the lifetime of non-equilibrium charge carriers and their recombination mechanisms are particularly important to the design of photovoltaic devices. In this present work, photoconductivity properties of CdTe crystals are investigated in a wide temperature range (
T=400–10 K) by the photo-induced current transient spectroscopy (PICTS) method. The bulk Bridgman CdTe samples was studied in the pulsed activation domain. Following these measurements, the value of deep (
E
A=200 meV) recombination level and shallow trap levels (
E
B=1 meV) were determined. Level
E
A result from structural defects of the Cd sublattice. In the low temperature region (
T |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2003.10.112 |