A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs

A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs

An efficient self-consistent device simulator coupling Poisson equation and Monte Carlo transport suitable for general silicon devices, including those with regions of high doping/carrier densities, is discussed. Key features include an original iteration scheme and an almost complete vectorization...

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Veröffentlicht in:IEEE transactions on computer-aided design of integrated circuits and systems 1989-04, Vol.8 (4), p.360-369
Hauptverfasser: Venturi, F., Smith, R.K., Sangiorgi, E.C., Pinto, M.R., Ricco, B.
Format: Artikel
Sprache:eng
Schlagworte:
Boltzmann equation
Geometry
History
Hot carriers
Microscopy
Monte Carlo methods
MOSFET circuits
Particle scattering
Poisson equations
Silicon devices
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Zusammenfassung:An efficient self-consistent device simulator coupling Poisson equation and Monte Carlo transport suitable for general silicon devices, including those with regions of high doping/carrier densities, is discussed. Key features include an original iteration scheme and an almost complete vectorization of the program. The simulator has been used to characterize nonequilibrium effects in deep submicron nMOSFETs. Substantial overshoot effects are noticeable at gate lengths of 0.25 mu m at room temperatures.< >
ISSN:0278-0070
1937-4151
DOI:10.1109/43.29590