High-performance large-area InGaAs MSM photodetectors with a pseudomorphic InGaP cap layer
We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-μm×300-μm square and a 300-μm-diameter circular detection area. With a pseudomorphic In/sub 0.9/Ga/sub 0.1/P cap layer, the detectors exhibit dark current densities less than 1 pA/μ on finger spaci...
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| Veröffentlicht in: | IEEE photonics technology letters 1995-08, Vol.7 (8), p.914-916 |
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| container_issue | 8 |
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| container_title | IEEE photonics technology letters |
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| creator | Yuang, Rong-Heng Shieh, Hung-Chang Chien, Yi-Jiunn Chan, Yi-Jen Chyi, Jen-Inn Lin, Wei Tu, Yuan-Kuang |
| description | We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-μm×300-μm square and a 300-μm-diameter circular detection area. With a pseudomorphic In/sub 0.9/Ga/sub 0.1/P cap layer, the detectors exhibit dark current densities less than 1 pA/μ on finger spacing. Bandwidth over 1 GHz has been obtained for these large-area detectors. Our results also show that the circular detector exhibits better speed performance as compared to the square one due to its smaller parasitic RC constant. |
| doi_str_mv | 10.1109/68.404013 |
| format | Article |
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With a pseudomorphic In/sub 0.9/Ga/sub 0.1/P cap layer, the detectors exhibit dark current densities less than 1 pA/μ on finger spacing. Bandwidth over 1 GHz has been obtained for these large-area detectors. Our results also show that the circular detector exhibits better speed performance as compared to the square one due to its smaller parasitic RC constant.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.404013</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bandwidth ; Dark current ; Detectors ; Electronics ; Exact sciences and technology ; Fabrication ; Fingers ; Indium gallium arsenide ; Indium phosphide ; Laboratories ; Optoelectronic devices ; Parasitic capacitance ; Photodetectors ; Semiconductor electronics. Microelectronics. Optoelectronics. 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With a pseudomorphic In/sub 0.9/Ga/sub 0.1/P cap layer, the detectors exhibit dark current densities less than 1 pA/μ on finger spacing. Bandwidth over 1 GHz has been obtained for these large-area detectors. Our results also show that the circular detector exhibits better speed performance as compared to the square one due to its smaller parasitic RC constant.</description><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Dark current</subject><subject>Detectors</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Fingers</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>Laboratories</subject><subject>Optoelectronic devices</subject><subject>Parasitic capacitance</subject><subject>Photodetectors</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>online_resources</toplevel><creatorcontrib>Yuang, Rong-Heng</creatorcontrib><creatorcontrib>Shieh, Hung-Chang</creatorcontrib><creatorcontrib>Chien, Yi-Jiunn</creatorcontrib><creatorcontrib>Chan, Yi-Jen</creatorcontrib><creatorcontrib>Chyi, Jen-Inn</creatorcontrib><creatorcontrib>Lin, Wei</creatorcontrib><creatorcontrib>Tu, Yuan-Kuang</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yuang, Rong-Heng</au><au>Shieh, Hung-Chang</au><au>Chien, Yi-Jiunn</au><au>Chan, Yi-Jen</au><au>Chyi, Jen-Inn</au><au>Lin, Wei</au><au>Tu, Yuan-Kuang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-performance large-area InGaAs MSM photodetectors with a pseudomorphic InGaP cap layer</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1995-08-01</date><risdate>1995</risdate><volume>7</volume><issue>8</issue><spage>914</spage><epage>916</epage><pages>914-916</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-μm×300-μm square and a 300-μm-diameter circular detection area. With a pseudomorphic In/sub 0.9/Ga/sub 0.1/P cap layer, the detectors exhibit dark current densities less than 1 pA/μ on finger spacing. Bandwidth over 1 GHz has been obtained for these large-area detectors. Our results also show that the circular detector exhibits better speed performance as compared to the square one due to its smaller parasitic RC constant.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/68.404013</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 1995-08, Vol.7 (8), p.914-916 |
| issn | 1041-1135 1941-0174 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28295951 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Bandwidth Dark current Detectors Electronics Exact sciences and technology Fabrication Fingers Indium gallium arsenide Indium phosphide Laboratories Optoelectronic devices Parasitic capacitance Photodetectors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | High-performance large-area InGaAs MSM photodetectors with a pseudomorphic InGaP cap layer |
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