High-performance large-area InGaAs MSM photodetectors with a pseudomorphic InGaP cap layer

We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-μm×300-μm square and a 300-μm-diameter circular detection area. With a pseudomorphic In/sub 0.9/Ga/sub 0.1/P cap layer, the detectors exhibit dark current densities less than 1 pA/μ on finger spaci...

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Veröffentlicht in:IEEE photonics technology letters 1995-08, Vol.7 (8), p.914-916
Hauptverfasser: Yuang, Rong-Heng, Shieh, Hung-Chang, Chien, Yi-Jiunn, Chan, Yi-Jen, Chyi, Jen-Inn, Lin, Wei, Tu, Yuan-Kuang
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Sprache:eng
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Zusammenfassung:We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-μm×300-μm square and a 300-μm-diameter circular detection area. With a pseudomorphic In/sub 0.9/Ga/sub 0.1/P cap layer, the detectors exhibit dark current densities less than 1 pA/μ on finger spacing. Bandwidth over 1 GHz has been obtained for these large-area detectors. Our results also show that the circular detector exhibits better speed performance as compared to the square one due to its smaller parasitic RC constant.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.404013