High-performance large-area InGaAs MSM photodetectors with a pseudomorphic InGaP cap layer
We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-μm×300-μm square and a 300-μm-diameter circular detection area. With a pseudomorphic In/sub 0.9/Ga/sub 0.1/P cap layer, the detectors exhibit dark current densities less than 1 pA/μ on finger spaci...
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Veröffentlicht in: | IEEE photonics technology letters 1995-08, Vol.7 (8), p.914-916 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-μm×300-μm square and a 300-μm-diameter circular detection area. With a pseudomorphic In/sub 0.9/Ga/sub 0.1/P cap layer, the detectors exhibit dark current densities less than 1 pA/μ on finger spacing. Bandwidth over 1 GHz has been obtained for these large-area detectors. Our results also show that the circular detector exhibits better speed performance as compared to the square one due to its smaller parasitic RC constant. |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/68.404013 |