A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation

A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation

A new mode of operation for Silicon-On-Insulator (SOI) MOSFET is experimentally investigated. This mode gives rise to a Dynamic Threshold voltage MOSFET (DTMOS). DTMOS threshold voltage drops as gate voltage is raised, resulting in a much higher current drive than regular MOSFET at low V/sub dd/. On...

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Veröffentlicht in:IEEE electron device letters 1994-12, Vol.15 (12), p.510-512
Hauptverfasser: Assaderaghi, F., Parke, S., Sinitsky, D., Bokor, J., Ko, P.K., Chenming Hu
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Contacts
Degradation
Digital systems
Electronics
Exact sciences and technology
Leakage current
Low voltage
MOSFET circuits
Power supplies
Ring oscillators
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon on insulator technology
Threshold voltage
Transistors
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Beschreibung
Zusammenfassung:A new mode of operation for Silicon-On-Insulator (SOI) MOSFET is experimentally investigated. This mode gives rise to a Dynamic Threshold voltage MOSFET (DTMOS). DTMOS threshold voltage drops as gate voltage is raised, resulting in a much higher current drive than regular MOSFET at low V/sub dd/. On the other hand, V/sub t/ is high at V/sub gs/=0, thus the leakage current is low. Suitability of this device for ultra low voltage operation is demonstrated by ring oscillator performance down to V/sub dd/=0.5 V.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.338420