Efficiencies of Schottky-barrier GaAs and both complementary structures of Si IMPATT diodes

Efficiencies of Schottky-barrier GaAs and both complementary structures of Si IMPATT diodes

Computer simulation results show that optimum dc to RF conversion efficiency is in descending order for Schottky-barrier GaAs, p + -n Si, and n + -p Si IMPATT diodes.

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 1973-05, Vol.20 (5), p.492-496
Hauptverfasser: Tantraporn, W., Se Puan Yu
Format: Artikel
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Computer simulation results show that optimum dc to RF conversion efficiency is in descending order for Schottky-barrier GaAs, p + -n Si, and n + -p Si IMPATT diodes.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1973.17680